1st International Workshop on Semiconductor Devices Modeling and Electronic Materials and IEEE EDS 2010 MINI-COLLOQUIUM

•  Dr. Victor Sverdlov

           Institute for Microelectronics, Vienna University of Technology (TUWIEN), Viena, Austria 

           "Modeling of Modern MOSFETs with Strain"

• Dr. Francisco Rubinelli

           Grupo de Física de Materiales, INTEC (UNL – CONICET), Univ. Nac. del Litoral (UNL), Santa Fe, Argentina

           "Computer Modelling of Hydrogenated Amorphous and Microcrystalline Silicon Based Solar Cells"

•  Dr. Joachim Piprek

            NUSOD Institute LLC, Newark, United States 

            "Impact of nitride material properties on the performance of GaN-based light emitters"

• Dr. Martín Alurralde

           Unidad de Actividad Física, CNEA, Buenos Aires, Argentina 

           "Applying Simulation to Radiation Effects Characterization of Electronic Devices"

• Dr. Marcelo Pavanello

           Centro Univ. de FEI, San Pablo, Brazil 

           "Impact of Device Architecture on the Analog Performance of Planar and Multiple Gate SOI MOSFETs"

• Dr. Enrique Miranda

           Universitat Autònoma de Barcelona (UAB), Barcelona, Spain 

           "Analysis of the breakdown spots location in MOS structures using spatial statistics"

• Dr. Pablo Levy

           Grupo Materia Condensada, CNEA-CONICET, Buenos Aires, Argentina 

           "Resistive switching nonvolatile memory devices"

• Dr. Fernando Guarín

           Semiconductor Research and Development Center, IBM Microelectronics, New York, United States 

           "Semiconductor Reliability Topics for Advanced CMOS Technologies"

•  Dr. Juan Pla

            Grupo de Energía Solar, CNEA-CONICET, Buenos Aires, Argentina 

            "Simulation of PV Devices at CNEA. Optical Properties of Solar Cell Structures, Homojunction and Multijunction Solar Cells, and PV Arrays for Space Applications"

•  Dr. Sergio Bampi

           Univ. Federal do Rio Grande do Sul (UFRGS), Brazil 

           "Nano-CMOS at the end of the 2-D scaling: The role of FinFETs"

•  Dr. Félix Palumbo

           Unidad de Actividad Física, CNEA-CONICET, Buenos Aires, Argentina 

           "Progressive Breakdown: Structure of the Oxide Damage and Reliability Projection"

•  Dr. Leonardo Errico

           Departamento de Física, Univ. Nac. de La Plata - IFLP, Argentina

           "Local structure around Fe impurities in rutile TiO₂."

•  Dr. Eitel Peltzer y Blancá

          GEMyDE-FI-UNLP, IFLYSIB-UNLP-CONICET, La Plata, Argentina 

          "Studies with ab-initio codes on electronic and magnetic materials applied to semiconductor devices"